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DMN2004WK
Maximum Ratings
(@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
20
±8
Units
V
V
Drain Current (Note 5)
Pulsed Drain Current (Note 6)
Steady
State
T A = +25°C
T A = +85°C
I D
I DM
540
390
1.5
mA
A
Thermal Characteristics
(@T A = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes:
5. Device mounted on FR-4 PCB.
Symbol
P D
R ? JA
T J, T STG
Value
200
625
-55 to +150
Units
mW
°C/W
°C
6. Pulse width ? 10 ? S, Duty Cycle ? 1%.
Electrical Characteristics
(@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
20
?
?
?
?
?
?
1
? 1
V
μ A
μ A
V GS = 0V, I D = 10 ? A
V DS = 16V, V GS = 0V
V GS = ? 4.5V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 7)
V GS(th)
R DS (ON)
|Y fs |
V SD
0.5
?
200
0.5
?
0.4
0.5 ?
0.7
?
?
1.0
0.55
0.70
0.9
?
1.4
V
?
ms
V
V DS = V GS , I D = 250 ? A
V GS = 4.5V, I D = 540mA
V GS = 2.5V, I D = 500mA
V GS = 1.8V, I D = 350mA
V DS =10V, I D = 0.2A
V GS = 0V, I S = 115mA
DYNAMIC CHARACTERISTICS(Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
?
?
?
?
?
?
150
25
20
pF
pF
pF
V DS = 16V, V GS = 0V
f = 1.0MHz
Notes:
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMN2004WK
Document number: DS30934 Rev. 5 - 2
2 of 6
www.diodes.com
September 2013
? Diodes Incorporated
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